? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40 a i c110 t c = 110 c20 a i cm t c = 25 c, 1ms 120 a ssoa v ge = 15v, t j = 125 c, r g = 10 i cm = 40 a (rbsoa) clamped inductive load @v ce 960 v p c t c = 25 c 180 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-247 & to-220) 1.13/10 nm/lb.in. f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight to-263 2.5 g to-220 3.0 g to-247 6.0 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces , v ge = 0v 25 a t j = 125 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 20a, v ge = 15v, note 1 2.3 2.5 v t j = 125 c 2.5 v ds100046a(11/09) genx3 tm 1200v igbts v ces = 1200v i c110 = 20a v ce(sat) 2.5v ultra-low vsat pt igbts for up to 3 khz switching ixga20n120a3 IXGP20N120A3 ixgh20n120a3 features z optimized for low conduction losses z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits g = gate c = collector e = emitter tab = collector to-263 aa (ixga) g e c (tab) g c e to-220ab (ixgp) c (tab) to-247 (ixgh) c (tab) g c e
ixys reserves the right to change limits, test conditions, and dimensions. ixga20n120a3 IXGP20N120A3 ixgh20n120a3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 20a, v ce = 10v, note 1 7 12 s c ies 1075 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 80 pf c res 27 pf q g 50 nc q ge i c = 20a, v ge = 15v, v ce = 0.5 ? v ces 7.3 nc q gc 23 nc t d(on) 16 ns t ri 44 ns e on 2.85 mj t d(off) 290 ns t fi 715 ns e off 6.47 mj t d(on) 16 ns t ri 50 ns e on 5.53 mj t d(off) 310 ns t fi 1220 ns e off 10.10 mj r thjc 0.69 c/w r thck to-220 0.50 c/w to-247 0.21 c/w inductive load, t j = 125 c i c = 20a, v ge = 15v v ce = 960v, r g = 10 note 2 inductive load, t j = 25 c i c = 20a, v ge = 15v v ce = 960v, r g = 10 note 2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - collector 3 - emitter 4 - collector to-220 (ixgp) outline notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . to-263 (ixga) outline 1 = gate 2 = collector 3 = emitter tab = collector to-247 (ixgh) ad outline 1 = gate 2 = collector 3 = emitter tab = collector
? 2009 ixys corporation, all rights reserved ixga20n120a3 IXGP20N120A3 ixgh20n120a3 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 4 8 12 16 20 24 28 32 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 30 35 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 40a i c = 20a i c = 10a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.5 3.5 4.5 5.5 6.5 7.5 56789101112131415 v ge - volts v ce - volts i c = 40 a t j = 25oc 10 a 20 a fig. 6. input admittance 0 5 10 15 20 25 30 35 40 45 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. ixga20n120a3 IXGP20N120A3 ixgh20n120a3 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 40 45 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v ge - volts v ce = 600v i c = 20a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved ixga20n120a3 IXGP20N120A3 ixgh20n120a3 fig. 12. inductive switching energy loss vs. gate resistance 8 10 12 14 16 18 20 22 24 26 10 15 20 25 30 35 40 45 50 r g - ohms e off - millijoules 2 4 6 8 10 12 14 16 18 20 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 960v i c = 40a i c = 20a fig. 17. inductive turn-off switching times vs. junction temperature 600 700 800 900 1000 1100 1200 1300 1400 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 270 280 290 300 310 320 330 340 350 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 960v i c = 40a i c = 20a fig. 15. inductive turn-off switching times vs. gate resistance 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 10 15 20 25 30 35 40 45 50 r g - ohms t f - nanoseconds 150 200 250 300 350 400 450 500 550 600 650 700 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 40a i c = 20a fig. 13. inductive switching energy loss vs. collector current 4 6 8 10 12 14 16 18 20 22 24 20 22 24 26 28 30 32 34 36 38 40 i c - amperes e off - millijoules 2 3 4 5 6 7 8 9 10 11 12 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 2 4 6 8 10 12 14 16 18 20 22 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 8 9 10 11 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 960v i c = 40a i c = 20a fig. 16. inductive turn-off switching times vs. collector current 600 700 800 900 1000 1100 1200 1300 1400 20 22 24 26 28 30 32 34 36 38 40 i c - amperes t f i - nanoseconds 280 290 300 310 320 330 340 350 360 t d(off) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. ixga20n120a3 IXGP20N120A3 ixgh20n120a3 ixys ref: g_20n120a3(4l)10-01-08 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 160 20 22 24 26 28 30 32 34 36 38 40 i c - amperes t r i - nanoseconds 15 16 17 18 19 20 21 22 23 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 960v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 14 16 18 20 22 24 26 28 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 960v i c = 20a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 10 15 20 25 30 35 40 45 50 r g - ohms t r i - nanoseconds 5 10 15 20 25 30 35 40 45 50 55 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 960v i c = 20a i c = 40a
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